Deterministic MOSFET channel-capacitance charge-injection step dV = Q_inj / (C_load + C_d) + previous-channel C_d memory sharing V_step*(C_d/(C_d+C_s)) & N*ln(2)*R_total*C_total settling engine (.json, .csv, .sp) built for Texas Instruments (TMUX), Vishay Siliconix (DG), Analog Devices (ADG), Nexperia — zero-upload ephemeral Wasm RAM execution.
Running ephemeral Wasm verification…